| Part Number | Package | Band(MHz) | Ppeak(W) | Pout(dBm) | Eff@Pout(%) | Power Gain(dB) | Status | Download |
|---|---|---|---|---|---|---|---|---|
| D2H135DE1 | ||||||||
| DXG1CHD8A-F2EF* | 780P2 | 3300~3800 | 450 | 48.5 | 42.0 | 14.0 | Released Product | |
| D2H120DE1 | ||||||||
| DXG2CH50A-200EF* | 780P2 | 4800~5000 | 200 | 44.5 | 44.2 | 14.2 | Released Product | |
| D2H095DE1 | ||||||||
| DOD1H0015-1800EF | 1230P2 | 915 | 1800 | 61.5 | 79.0 | 18.0 | Released Product | |
| D2H065DE1 | ||||||||
| D2H065DB1 | ||||||||
| D2H055DB1 | ||||||||
| DOD1H2425-600EF | 1230P2 | 2435~2465 | 600 | 57.4 | 73.5 | 14.7 | Released Product | |
| D2H046DA1 | ||||||||
| D2H042DB1 | ||||||||
| D2H039DB1 | ||||||||
| D2H039DA1 | ||||||||
| D2H025DB1 | ||||||||
| D2H025DA1 | ||||||||
| D2H014DA1 | ||||||||
| D2H010DA1 | ||||||||
| DXG1PH22A-120N* | DFN 7mm×10mm | 1805~2170 | 120 | 42.3 | 55.5 | 14.6 | Released Product | |
| DXG2PH27A-100N* | DFN 7mm×6.5mm | 2496~2690 | 90 | 41.3 | 56.5 | 15.9 | Released Product |
D2H135DE1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 975*4165 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 135 | W |
| 效率 | 80 | % |
| 增益 | 21.0 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 442 mA, 频率 = 2.6 GHz
DXG1CHD8A-F2EF is a 500 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 3300 | MHz |
| Frequency (Max.) | 3800 | MHz |
| Supply Voltage (Typ.) | 52 | V |
| Psat (Typ.) | 56.5 | dBm |
| Power Gain @ 3400 MHz | 14.0 | dB |
| Efficiency @ 3400 MHz | 42.0 | % |
| ACPR @ 3400 MHz | -28.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, Test condition: VDS = 52 V, IDQA = 400 mA, VGSB = - 5.2 V,Pout = 48.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
D2H120DE1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 860*2710 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 120 | W |
| 效率 | 81 | % |
| 增益 | 20.8 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 383 mA, 频率 = 2.6 GHz
DXG2CH50A-200EF is a 200 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 4800 | MHz |
Frequency (Max.) | 5000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 53.2 | dBm |
Power Gain @ 4900 MHz | 14.2 | dB |
Efficiency @ 4900 MHz | 44.5 | % |
| ACPR @ 4900 MHz | -28.5/-47 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 200 mA, VGSB = - 4.8 V, Pout = 44.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
D2H095DE1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 785*2685 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 95 | W |
| 效率 | 81 | % |
| 增益 | 21.0 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 297 mA, 频率 = 2.6 GHz
DOD1H0015-1800EF is a 1800 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for RF energy applications at frequencies from DC to 1500 MHz.
Parameter | Value | Unit |
Frequency (Min.) | DC | MHz |
Frequency (Max.) | 1500 | MHz |
Supply Voltage (Typ.) | 50 | V |
Psat (Typ.) | 61.5 | dBm |
Power Gain @ 650 MHz | 18.0 | dB |
Efficiency @ 650 MHz | 79.0 | % |
Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, IDQ = 200 mA, test signal is CW.
D2H065DE1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 880*2000 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 65 | W |
| 效率 | 82 | % |
| 增益 | 21.5 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 189 mA, 频率 = 2.6 GHz
D2H065DB1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 845*1995 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 65 | W |
| 效率 | 82 | % |
| 增益 | 21.8 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 193 mA, 频率 = 2.6 GHz
D2H055DB1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 785*1755 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 55 | W |
| 效率 | 82 | % |
| 增益 | 22.0 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 162 mA, 频率 = 2.6 GHz
DOD1H2425-600EF is a 600 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 2400 | MHz |
Frequency (Max.) | 2500 | MHz |
Supply Voltage (Typ.) | 50 | V |
Psat (Typ.) | 57.4 | dBm |
Power Gain @ 2450 MHz | 14.7 | dB |
Efficiency @ 2450 MHz | 73.5 | % |
Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, VGS = - 4.8 V, test signal is CW.
D2H046DA1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 880*1640 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 46 | W |
| 效率 | 82 | % |
| 增益 | 21.3 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 143 mA, 频率 = 2.6 GHz
D2H042DB1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 785*1515 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 42 | W |
| 效率 | 82 | % |
| 增益 | 22.7 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 126 mA, 频率 = 2.6 GHz
D2H039DB1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 785*1395 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 39 | W |
| 效率 | 82 | % |
| 增益 | 22.7 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 116 mA, 频率 = 2.6 GHz
D2H039DA1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 845*1092 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 39 | W |
| 效率 | 82 | % |
| 增益 | 22.1 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 120 mA, 频率 = 2.6 GHz
D2H025DB1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 685*1035 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 25 | W |
| 效率 | 82 | % |
| 增益 | 22.7 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 74 mA, 频率 = 2.6 GHz
D2H025DA1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 645*825 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 25 | W |
| 效率 | 82 | % |
| 增益 | 21.9 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 76 mA, 频率 = 2.6 GHz
D2H014DA1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 695*568 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 14 | W |
| 效率 | 83 | % |
| 增益 | 22.9 | Db |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 42 mA, 频率 = 2.6 GHz
D2H010DA1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 685*570 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 10 | W |
| 效率 | 83 | % |
| 增益 | 23.7 | Db |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 30 mA, 频率 = 2.6 GHz
DXG1PH22A-120N is a 120 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 1805 MHz to 2170 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 1805 | MHz |
| Frequency (Max.) | 2170 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 50.8 | dBm |
| Power Gain @ 2110 MHz | 14.6 | dB |
| Efficiency @ 2110 MHz | 55.5 | % |
| ACPR @ 2100 MHz | -35.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 120 mA, VGSB = - 5.35 V, Pout = 42.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH27A-100N is a 100 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2496 MHz to 2690 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 2496 | MHz |
| Frequency (Max.) | 2690 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 49.9 | dBm |
| Power Gain @ 2600 MHz | 15.9 | dB |
| Efficiency @ 2600 MHz | 56.5 | % |
| ACPR @ 2600 MHz | -32.5 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.9 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
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