| Part Number | Package | Band(MHz) | Application | Ppeak(dBm) | Pavg(dBm) | Eff@Pavg(%) | Linear Gain(dB) | Status | Download |
|---|---|---|---|---|---|---|---|---|---|
| D2H042DB1 | |||||||||
| D2H039DB1 | |||||||||
| D2H039DA1 | |||||||||
| D2H025DB1 | |||||||||
| D2H025DA1 | |||||||||
| D2H014DA1 | |||||||||
| D2H010DA1 | |||||||||
| DXG1PH19A-60N | DFN 7mm×6.5mm | 1805~1880 | Telecom Infrastructure | 48.0 | 40.3 | 61.0 | 18.0 | Released Product | |
| DXG1PH22A-120N | DFN 7mm×10mm | 1805~2170 | Telecom Infrastructure | 50.8 | 42.3 | 55.5 | 14.6 | Released Product | |
| DXG2PH27A-100N | DFN 7mm×6.5mm | 2496~2690 | Telecom Infrastructure | 49.9 | 41.3 | 56.5 | 15.9 | Released Product | |
| DXG2PH36A-70N | DFN 7mm×6.5mm | 3300~3800 | Telecom Infrastructure | 48.1 | 39.3 | 53.5 | 15.4 | Released Product | |
| DXG2PH36A-100N | DFN 7mm×6.5mm | 3300~3800 | Telecom Infrastructure | 50.2 | 41.3 | 54.3 | 15.8 | Released Product | |
| DXG2PH50B-20N | DFN 4mm×4.5mm | 4400~5000 | Telecom Infrastructure | 42.8 | 47.8 | 37.0 | 16.0 | In Development | |
| DXG2PH50A-90N | DFN 7mm×6.5mm | 4800~5000 | Telecom Infrastructure | 49.6 | 41.3 | 48.3 | 12.5 | In Development | |
| DXG2PH60B-14N | DFN 4mm×4.5mm | DC~6000 | Telecom Infrastructure | 42.2 | / | 41.8 | 15.4 | Released Product | |
| DXG1PH60P-40N | DFN 7mm×6.5mm | DC~6000 | Telecom Infrastructure | 46.3 | 33.0 | 31.7 | 21.3 | Released Product | |
| DXG1PH60P-60N | DFN 7mm×6.5mm | DC~6000 | Telecom Infrastructure | 47.8 | 40.0 | 55.0 | 19.5 | Released Product | |
| DMC1G26-10MN | LGA 7mm×7mm | 2500~2700 | Telecom Infrastructure | 39.2 | 30.0 | 46.3 | 29.4 | Engineering Sample | |
| DMC1G35-12MN | LGA 7mm×7mm | 3300~3600 | Telecom Infrastructure | 39.5 | 30.0 | 42.9 | 29.9 | Released Product |
D2H042DB1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 785*1515 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 42 | W |
| 效率 | 82 | % |
| 增益 | 22.7 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 126 mA, 频率 = 2.6 GHz
D2H039DB1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 785*1395 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 39 | W |
| 效率 | 82 | % |
| 增益 | 22.7 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 116 mA, 频率 = 2.6 GHz
D2H039DA1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 845*1092 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 39 | W |
| 效率 | 82 | % |
| 增益 | 22.1 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 120 mA, 频率 = 2.6 GHz
D2H025DB1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 685*1035 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 25 | W |
| 效率 | 82 | % |
| 增益 | 22.7 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 74 mA, 频率 = 2.6 GHz
D2H025DA1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 645*825 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 25 | W |
| 效率 | 82 | % |
| 增益 | 21.9 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 76 mA, 频率 = 2.6 GHz
D2H014DA1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 695*568 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 14 | W |
| 效率 | 83 | % |
| 增益 | 22.9 | Db |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 42 mA, 频率 = 2.6 GHz
D2H010DA1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 685*570 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 10 | W |
| 效率 | 83 | % |
| 增益 | 23.7 | Db |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 30 mA, 频率 = 2.6 GHz
DXG1PH19A-60N is a 60 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 1805 MHz to 1880 MHz cellular base station applications. It features input matching, wideband and a DFN package.d
Parameter | Value | Unit |
Frequency (Min.) | 1805 | MHz |
Frequency (Max.) | 1880 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 48.0 | dBm |
Power Gain @ 1842 MHz | 18.0 | dB |
Efficiency @ 1842 MHz | 61.0 | % |
ACPR @ 1842 MHz | -30.0 | dBC |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 65 mA, VGSB = - 4.7 V, Pout = 40.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG1PH22A-120N is a 120 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 1805 MHz to 2170 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 1805 | MHz |
| Frequency (Max.) | 2170 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 50.8 | dBm |
| Power Gain @ 2110 MHz | 14.6 | dB |
| Efficiency @ 2110 MHz | 55.5 | % |
| ACPR @ 2100 MHz | -35.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 120 mA, VGSB = - 5.35 V, Pout = 42.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH27A-100N is a 100 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2496 MHz to 2690 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 2496 | MHz |
| Frequency (Max.) | 2690 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 49.9 | dBm |
| Power Gain @ 2600 MHz | 15.9 | dB |
| Efficiency @ 2600 MHz | 56.5 | % |
| ACPR @ 2600 MHz | -32.5 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.9 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH36A-70N is a 70 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 3300 | MHz |
Frequency (Max.) | 3800 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 48.1 | dBm |
Power Gain @ 3500 MHz | 15.4 | dB |
Efficiency @ 3500 MHz | 53.5 | % |
| ACPR @ 3500 MHz | -31.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 60 mA, VGSB = - 5.3 V, Pout = 39.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH36A-100N is a 100 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax,which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800MHz.
Parameter | Value | Unit |
Frequency (Min.) | 3300 | MHz |
Frequency (Max.) | 3800 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 50.2 | dBm |
Power Gain @ 3500 MHz | 15.8 | dB |
Efficiency @ 3500 MHz | 54.3 | % |
ACPR @ 3500 MHz | -32.0 | dBC |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.2 V,Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH50B-20N is a 20 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4400 MHz to 5000 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 4400 | MHz |
| Frequency (Max.) | 5000 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 42.8 | dBm |
| Power Gain @ 4900 MHz | 16.0 | dB |
| Efficiency @ 4900 MHz | 47.8 | % |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 30 mA, Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH50A-90N is a 90 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 4800 | MHz |
| Frequency (Max.) | 5000 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 49.6 | dBm |
| Power Gain @ 4880 MHz | 12.5 | dB |
| Efficiency @ 4880 MHz | 48.3 | % |
| ACPR @ 4880 MHz | -32.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 60 mA, VGSB = - 5.6 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH60B-14N is a 14 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6 GHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 42.2 | dBm |
Power Gain @ 3500 MHz | 15.4 | dB |
Efficiency @ 3500 MHz | 41.8 | % |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQ = 20 mA, Pout = Psat - 6 dB, Pulsed CW, Pulse width = 100 μs, Duty cycle = 10 %.
DXG1PH60P-40N is a 40 W unmatched RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for DC to 6 GHz cellular base station
applications. It features symmetric Doherty, wide bandwidth, high gain and a DFN package.
Parameter | Value | Unit |
Frequency (Min.) | DC | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 46.3 | dBm |
Power Gain @ 1842 MHz | 21.3 | dB |
Efficiency @ 1842 MHz | 31.7 | % |
ACPR @ 1842 MHz | -41.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS= 48 V, IDQA = 20 mA, VGSB = - 5.1 V, Pout = 33.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 10.8 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG1PH60P-60N is a 60 W unmatched RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for DC to 6 GHz cellular base station
applications. It features symmetric Doherty, wide bandwidth, high gain and a DFN package.
Parameter | Value | Unit |
Frequency (Min.) | DC | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 47.8 | dBm |
Power Gain @ 1842 MHz | 19.5 | dB |
Efficiency @ 1842 MHz | 55.0 | % |
ACPR @ 1842 MHz | -30.0 | dBC |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heat sink, test condition: VDS = 48 V, IDQA = 45 mA, VGSB = - 5.0 V, Pout = 40.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DMC1G26-10MN is a 8 W RF GaN HEMT Module with first generation RF GaN technology from Dynax, which is ideal for small cell applications at frequencies from 2500 MHz to 2700 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 2500 | MHz |
| Frequency (Max.) | 2700 | MHz |
| Supply Voltage (Typ.) | 24 | V |
| Psat (Typ.) | 39.2 | dBm |
| Power Gain @ 2600 MHz | 29.4 | dB |
| Efficiency @ 2600 MHz | 46.3 | % |
| ACPR @ 2600 MHz | -33.0 | dBc |
Note: Above performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 24 V,IDQ_DRIVER = 10 mA, IDQ_CARRIER = 20 mA, VGS_PEAK = - 2.7 V,Single-Carrier W-CDMA, IQ Magnitude Clipping,Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF.ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DMC1G35-12MN is a 10 W RF GaN HEMT Module with first generation RF GaN technology from Dynax, which is ideal for small cell applications at frequencies from 3300 MHz to 3600 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 3300 | MHz |
| Frequency (Max.) | 3600 | MHz |
| Supply Voltage (Typ.) | 24 | V |
| Psat (Typ.) | 39.5 | dBm |
| Power Gain @ 3500 MHz | 29.9 | dB |
| Efficiency @ 3500 MHz | 42.9 | % |
| ACPR @ 3500 MHz | -35.5 | dBc |
Note: Above performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink,test condition: VDS = 24 V, IDQ_DRIVER = 10 mA, IDQ_CARRIER = 30 mA,VGS_PEAK = - 3.0 V, Single-Carrier W-CDMA, IQ Magnitude Clipping,Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
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