集成多芯片模块

Part Number Package Band(MHz) Application Ppeak(dBm) Pavg(dBm) Eff@Pavg(%) Linear Gain(dB) Status Download
DMC1G26-10MN LGA 7mm×7mm 2500~2700 Telecom Infrastructure 39.2 30.0 46.3 29.4 Engineering Sample
DMC1G35-12MN LGA 7mm×7mm 3300~3600 Telecom Infrastructure 39.5 30.0 42.9 29.9 Released Product
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DMC1G26-10MN


Brief description for the product

DMC1G26-10MN

DMC1G26-10MN is a 8 W RF GaN HEMT Module with first generation RF GaN technology from Dynax, which is ideal for small cell applications at frequencies from 2500 MHz to 2700 MHz.


Operating Characteristics


ParameterValueUnit
Frequency (Min.)2500MHz
Frequency (Max.)2700MHz
Supply Voltage (Typ.)24V
Psat (Typ.)39.2dBm
Power Gain @ 2600 MHz29.4dB
Efficiency @ 2600 MHz46.3%
ACPR @ 2600 MHz-33.0dBc

Note: Above performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 24 V,IDQ_DRIVER = 10 mA, IDQ_CARRIER = 20 mA, VGS_PEAK = - 2.7 V,Single-Carrier W-CDMA, IQ Magnitude Clipping,Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF.ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.



DMC1G35-12MN


Brief description for the product

DMC1G35-12MN

DMC1G35-12MN is a 10 W RF GaN HEMT Module with first generation RF GaN technology from Dynax, which is ideal for small cell applications at frequencies from 3300 MHz to 3600 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)3300MHz
Frequency (Max.)3600MHz
Supply Voltage (Typ.)24V
Psat (Typ.)39.5dBm
Power Gain @ 3500 MHz29.9dB
Efficiency @ 3500 MHz42.9%
ACPR @ 3500 MHz-35.5dBc

Note: Above performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink,test condition: VDS = 24 V, IDQ_DRIVER = 10 mA, IDQ_CARRIER = 30 mA,VGS_PEAK = - 3.0 V, Single-Carrier W-CDMA, IQ Magnitude Clipping,Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.