产品

Part Number Package Band(MHz) Application Ppeak(dBm) Pavg(dBm) Eff@Pavg(%) Linear Gain(dB) Status Download
D2J080DH2
D2J325DB2
D2J185DE2
D2J160DH2
D2J140DE2
D2J090DE2
D2J070DH2
D2H620DE1
DXG1CH08B-240CF Ceramic 400-2 758~821 Telecom Infrastructure 53.8 - - - Released Product
D2H500DE1
DXG1CH08A-560EF Ceramic 780-4 758~821 Telecom Infrastructure 57.0 49.0 56.0 18.0 Released Product
D2H400DE1
DXG1CH08A-540EF Ceramic 780-4 758~821 Telecom Infrastructure 57.0 49.0 58.0 18.0 Released Product
D2H320DB1
DXG1CH19A-100EF Ceramic 400-4 1805~2170 Telecom Infrastructure 50.0 41.7 58.0 16.8 Released Product
D2H320DE1
DXG1CH19A-370EF Ceramic 780-4 1805~1880 Telecom Infrastructure 55.7 47.5 56.0 15.5 Released Product
D2H290DE1
DXG2CH22A-520EF Ceramic 780-4 2110~2170 Telecom Infrastructure 57.1 49.0 58.2 14.8 Released Product
D2H235DE1

D2J080DH2


Brief description for the product

D2J080DH2

D2J080DH2是一款碳化硅(SiC)基氮化镓(GaN)高电子迁移率晶体管(HEMT),具有高效率、高增益、易于匹配、宽带宽等特点,是各种射频和微波应用的理想选择。

Operating Characteristics

参数单位
产品尺寸725*2985mm
典型功率 @6GHz 48V79.8W
效率 @6GHz 48V73%
增益 @6GHz 48V20.6dB
典型功率 @10GHz 28V43.9W
效率 @10GHz 28V59%
增益 @10GHz 28V15.5dB














1、效率、增益标识为对应 48V 6GHz频点,最大效率下的仿真数据;

仿真测试条件:VDD = 48 V, IDQ = 264 mA, 频率 = 6 GHz


2、效率、增益标识为对应 28V 10GHz频点,最大效率下的仿真数据

仿真测试条件:VDD = 28 V, IDQ = 264 mA, 频率 = 10 GHz


D2J325DB2


Brief description for the product

D2J325DB2

D2J325DB2是一款碳化硅(SiC)基氮化镓(GaN)高电子迁移率晶体管(HEMT),具有高效率、高增益、易于匹配、宽带宽等特点,是各种射频和微波应用的理想选择。

Operating Characteristics

参数单位
产品尺寸945*6075mm
典型功率 @6GHz 48V325W
效率 @6GHz 48V61%
增益 @6GHz 48V17.3dB
典型功率 @10GHz 28V180W
效率 @10GHz 28V45%
增益 @10GHz 28V9.8dB














1、效率、增益标识为对应 48V 6GHz频点,最大效率下的仿真数据;

仿真测试条件:VDD = 48 V, IDQ = 1267 mA, 频率 = 6 GHz


2、效率、增益标识为对应 28V 10GHz频点,最大效率下的仿真数据

仿真测试条件:VDD = 28 V, IDQ = 1267 mA, 频率 = 10 GHz


D2J185DE2


Brief description for the product

D2J185DE2

D2J185DE2是一款碳化硅(SiC)基氮化镓(GaN)高电子迁移率晶体管(HEMT),具有高效率、高增益、易于匹配、宽带宽等特点,是各种射频和微波应用的理想选择。

Operating Characteristics

参数单位
产品尺寸920*4250mm
典型功率 @6GHz 48V185W
效率 @6GHz 48V67%
增益 @6GHz 48V18.1dB
典型功率 @10GHz 28V100W
效率 @10GHz 28V52%
增益 @10GHz 28V12.1dB














1、效率、增益标识为对应 48V 6GHz频点,最大效率下的仿真数据;

仿真测试条件:VDD = 48 V, IDQ = 697 mA, 频率 = 6 GHz


2、效率、增益标识为对应 28V 10GHz频点,最大效率下的仿真数据

仿真测试条件:VDD = 28 V, IDQ = 697 mA, 频率 = 10 GHz


D2J160DH2


Brief description for the product

D2J160DH2

D2J0160DH2是一款碳化硅(SiC)基氮化镓(GaN)高电子迁移率晶体管(HEMT),具有高效率、高增益、易于匹配、宽带宽等特点,是各种射频和微波应用的理想选择。

Operating Characteristics

参数单位
产品尺寸800*4390mm
典型功率 @6GHz 48V160W
效率 @6GHz 48V69%
增益 @6GHz 48V19.6dB
典型功率 @10GHz 28V90W
效率 @10GHz 28V54%
增益 @10GHz 28V13.8dB














1、效率、增益标识为对应 48V 6GHz频点,最大效率下的仿真数据;

仿真测试条件:VDD = 48 V, IDQ = 308 mA, 频率 = 6 GHz


2、效率、增益标识为对应 28V 10GHz频点,最大效率下的仿真数据

仿真测试条件:VDD = 28 V, IDQ = 308 mA, 频率 = 10 GHz


D2J140DE2


Brief description for the product

D2J140DE2

D2J140DE2是一款碳化硅(SiC)基氮化镓(GaN)高电子迁移率晶体管(HEMT),具有高效率、高增益、易于匹配、宽带宽等特点,是各种射频和微波应用的理想选择。

Operating Characteristics

参数单位
产品尺寸850*3770mm
典型功率 @6GHz 48V140W
效率 @6GHz 48V70%
增益 @6GHz 48V18.4dB
典型功率 @10GHz 28V75W
效率 @10GHz 28V55%
增益 @10GHz 28V13.0dB














1、效率、增益标识为对应 48V 6GHz频点,最大效率下的仿真数据;

仿真测试条件:VDD = 48 V, IDQ =497 mA, 频率 = 6 GHz


2、效率、增益标识为对应 28V 10GHz频点,最大效率下的仿真数据

仿真测试条件:VDD = 28 V, IDQ = 497 mA, 频率 = 10 GHz


D2J090DE2


Brief description for the product

D2J090DE2

D2J090DE2是一款碳化硅(SiC)基氮化镓(GaN)高电子迁移率晶体管(HEMT),具有高效率、高增益、易于匹配、宽带宽等特点,是各种射频和微波应用的理想选择。

Operating Characteristics

参数单位
产品尺寸790*2835mm
典型功率 @6GHz 48V90W
效率 @6GHz 48V73%
增益 @6GHz 48V18.9dB
典型功率 @10GHz 28V50W
效率 @10GHz 28V58%
增益 @10GHz 28V13.7dB














1、效率、增益标识为对应 48V 6GHz频点,最大效率下的仿真数据;

仿真测试条件:VDD = 48 V, IDQ =308 mA, 频率 = 6 GHz


2、效率、增益标识为对应 28V 10GHz频点,最大效率下的仿真数据

仿真测试条件:VDD = 28 V, IDQ = 308 mA, 频率 = 10 GHz


D2J070DH2


Brief description for the product

D2J070DH2

D2J070DH2是一款碳化硅(SiC)基氮化镓(GaN)高电子迁移率晶体管(HEMT),具有高效率、高增益、易于匹配、宽带宽等特点,是各种射频和微波应用的理想选择。

Operating Characteristics

参数单位
产品尺寸655*2725mm
典型功率 @6GHz 48V70W
效率 @6GHz 48V73%
增益 @6GHz 48V20.5dB
典型功率 @10GHz 28V38W
效率 @10GHz 28V60%
增益 @10GHz 28V15.5dB














1、效率、增益标识为对应 48V 6GHz频点,最大效率下的仿真数据;

仿真测试条件:VDD = 48 V, IDQ =227 mA, 频率 = 6 GHz


2、效率、增益标识为对应 28V 10GHz频点,最大效率下的仿真数据

仿真测试条件:VDD = 28 V, IDQ = 227 mA, 频率 = 10 GHz


D2H620DE1


Brief description for the product

D2H620DE1

D2H620DE1是一款碳化硅(SiC)基氮化镓(GaN)高电子迁移率晶体管(HEMT),具有高效率、高增益、易于匹配、宽带宽等特点,是各种射频和微波应用的理想选择。

Operating Characteristics

参数单位
产品尺寸1445*5870mm
应用电压48V
典型功率620W
效率
75%
增益18.3Db











效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据

仿真测试条件:VDD = 48 V, IDQ = 2400 mA, 频率 = 2.6 GHz


DXG1CH08B-240CF


Brief description for the product

DXG1CH08B-240CF

DXG1CH08B-240CF is a 240 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 758 MHz to 821 MHz cellular base station applications. It features input matching, wideband and an earless thermally-enhanced package.

 

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

758

MHz

Frequency (Max.)

821

MHz

Supply Voltage (Typ.)

48

MHz

Psat (Typ.)

53.8

V

Power Gain 

/dBm

Efficiency  

/dB

ACPR 

/dBc


Note: Above Performance is the typical performance in Dynax’s demo with the device soldered to the heatsink, test condition: VDS = 48 V, IDQ = 650 mA, Pout = 47.8 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

 

D2H500DE1


Brief description for the product

D2H500DE1

D2H500DE1是一款碳化硅(SiC)基氮化镓(GaN)高电子迁移率晶体管(HEMT),具有高效率、高增益、易于匹配、宽带宽等特点,是各种射频和微波应用的理想选择。

Operating Characteristics

参数单位
产品尺寸1225*5900mm
应用电压48V
典型功率500W
效率
72%
增益18.4Db











效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据

仿真测试条件:VDD = 48 V, IDQ = 1872 mA, 频率 = 2.6 GHz


DXG1CH08A-560EF


Brief description for the product

DXG1CH08A-560EF

DXG1CH08A-560EF is a 560 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 758 MHz to 821 MHz cellular base station applications. It features input matching, wideband and an earless thermally-enhanced package.


Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

758

MHz

Frequency (Max.)

821

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

57.0

dBm

Power Gain @   780   MHz

18.0

dB

Efficiency  @    780   MHz

56

%

ACPR @   780   MHz

-28.0

dBC

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 500 mA, VGSB = - 5.2 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


D2H400DE1


Brief description for the product

D2H400DE1

D2H400DE1是一款碳化硅(SiC)基氮化镓(GaN)高电子迁移率晶体管(HEMT),具有高效率、高增益、易于匹配、宽带宽等特点,是各种射频和微波应用的理想选择。

Operating Characteristics

参数单位
产品尺寸1065*5900mm
应用电压48V
典型功率400W
效率
73%
增益19.2Db











效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据

仿真测试条件:VDD = 48 V, IDQ = 1488 mA, 频率 = 2.6 GHz


DXG1CH08A-540EF


Brief description for the product

DXG1CH08A-540EF

DXG1CH08A-540EF is a 540 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 758 MHz to 821 MHz cellular base station applications. It features input matching, wideband and a thermally-enhanced package.


Operating Characteristics


Parameter

Value

Unit

Frequency (Min.)

758

MHz

Frequency (Max.)

821

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

57.0

dBm

Power Gain @ 780 MHz

18.0

dB

Efficiency @ 780 MHz

58.0

%

ACPR @ 780 MHz

-28.0

dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, Test condition: VDS = 48 V, IDQA = 500 mA, VGSB = - 4.5 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


D2H320DB1


Brief description for the product

D2H320DB1

D2H320DB1是一款碳化硅(SiC)基氮化镓(GaN)高电子迁移率晶体管(HEMT),具有高效率、高增益、易于匹配、宽带宽等特点,是各种射频和微波应用的理想选择。

Operating Characteristics

参数单位
产品尺寸915*6075mm
应用电压48V
典型功率320W
效率
76%
增益20.1Db











效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据

仿真测试条件:VDD = 48 V, IDQ = 1180 mA, 频率 = 2.6 GHz


DXG1CH19A-100EF


Brief description for the product

DXG1CH19A-100EF

DXG1CH19A-100EF is a 100 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 1805 MHz to 2170 MHz cellular base station applications. It features input matching, wide instantaneous bandwidth and an earless thermally-enhanced package.


Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

1805

MHz

Frequency (Max.)

2170

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

50.0

dBm

Power Gain @  2140   MHz

16.8

dB

Efficiency  @    2140   MHz

58.0

%

ACPR @   2140   MHz

-30.0

dBC

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 80 mA, VGSB = - 5.2 V, Pout = 41.7 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


D2H320DE1


Brief description for the product

D2H320DE1

D2H320DE1是一款碳化硅(SiC)基氮化镓(GaN)高电子迁移率晶体管(HEMT),具有高效率、高增益、易于匹配、宽带宽等特点,是各种射频和微波应用的理想选择。

Operating Characteristics

参数单位
产品尺寸935*5870mm
应用电压48V
典型功率320W
效率
76%
增益19.3Db











效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据

仿真测试条件:VDD = 48 V, IDQ = 1176 mA, 频率 = 2.6 GHz


DXG1CH19A-370EF


Brief description for the product

DXG1CH19A-370EF

DXG1CH19A-370EF is a 370 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 1805 MHz to 1880 MHz cellular base station applications. It features input matching, wide instantaneous bandwidth and a thermally-enhanced package.


Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

1805

MHz

Frequency (Max.)

1880

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

55.7

dBm

Power Gain @ 1842 MHz

15.5

dB

Efficiency @ 1842 MHz

56.0

%

ACPR @ 1842 MHz

-28.0

dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 400 mA, VGSB = - 5.2 V, Pout = 47.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

 


D2H290DE1


Brief description for the product

D2H290DE1

D2H290DE1是一款碳化硅(SiC)基氮化镓(GaN)高电子迁移率晶体管(HEMT),具有高效率、高增益、易于匹配、宽带宽等特点,是各种射频和微波应用的理想选择。

Operating Characteristics

参数单位
产品尺寸955*5795mm
应用电压48V
典型功率290W
效率
77%
增益20.2dB











效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据

仿真测试条件:VDD = 48 V, IDQ = 1056 mA, 频率 = 2.6 GHz


DXG2CH22A-520EF


Brief description for the product

DXG2CH22A-520EF

DXG2CH22A-520EF is a 520 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2110 MHz to 2170 MHz.


Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

2110

MHz

Frequency (Max.)

2170

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

57.1

dBm

Power Gain @ 2140 MHz

14.8

dB

Efficiency @ 2140 MHz

58.2

%

ACPR @ 2140 MHz

-34.6

dBC


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 200 mA, VGSB = - 5.5 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF.ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


D2H235DE1


Brief description for the product

D2H235DE1

D2H235DE1是一款碳化硅(SiC)基氮化镓(GaN)高电子迁移率晶体管(HEMT),具有高效率、高增益、易于匹配、宽带宽等特点,是各种射频和微波应用的理想选择。

Operating Characteristics

参数单位
产品尺寸835*5440mm
应用电压48V
典型功率235W
效率
79%
增益20.3dB











效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据

仿真测试条件:VDD = 48 V, IDQ = 842 mA, 频率 = 2.6 GHz