| Part Number | Package | Band(MHz) | Application | Ppeak(dBm) | Pavg(dBm) | Eff@Pavg(%) | Linear Gain(dB) | Status | Download |
|---|---|---|---|---|---|---|---|---|---|
| D2J080DH2 | |||||||||
| D2J325DB2 | |||||||||
| D2J185DE2 | |||||||||
| D2J160DH2 | |||||||||
| D2J140DE2 | |||||||||
| D2J090DE2 | |||||||||
| D2J070DH2 | |||||||||
| D2H620DE1 | |||||||||
| DXG1CH08B-240CF | Ceramic 400-2 | 758~821 | Telecom Infrastructure | 53.8 | - | - | - | Released Product | |
| D2H500DE1 | |||||||||
| DXG1CH08A-560EF | Ceramic 780-4 | 758~821 | Telecom Infrastructure | 57.0 | 49.0 | 56.0 | 18.0 | Released Product | |
| D2H400DE1 | |||||||||
| DXG1CH08A-540EF | Ceramic 780-4 | 758~821 | Telecom Infrastructure | 57.0 | 49.0 | 58.0 | 18.0 | Released Product | |
| D2H320DB1 | |||||||||
| DXG1CH19A-100EF | Ceramic 400-4 | 1805~2170 | Telecom Infrastructure | 50.0 | 41.7 | 58.0 | 16.8 | Released Product | |
| D2H320DE1 | |||||||||
| DXG1CH19A-370EF | Ceramic 780-4 | 1805~1880 | Telecom Infrastructure | 55.7 | 47.5 | 56.0 | 15.5 | Released Product | |
| D2H290DE1 | |||||||||
| DXG2CH22A-520EF | Ceramic 780-4 | 2110~2170 | Telecom Infrastructure | 57.1 | 49.0 | 58.2 | 14.8 | Released Product | |
| D2H235DE1 |
D2J080DH2是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 725*2985 | mm |
| 典型功率 @6GHz 48V | 80 | W |
| 效率 @6GHz 48V | 73 | % |
| 增益 @6GHz 48V | 20.6 | dB |
| 典型功率 @10GHz 28V | 44 | W |
| 效率 @10GHz 28V | 59 | % |
| 增益 @10GHz 28V | 15.5 | dB |
1、效率、增益标识为对应 48V 6GHz频点，最大效率下的仿真数据；
仿真测试条件：VDD = 48 V, IDQ = 264 mA, 频率 = 6 GHz
2、效率、增益标识为对应 28V 10GHz频点，最大效率下的仿真数据
仿真测试条件：VDD = 28 V, IDQ = 264 mA, 频率 = 10 GHz
D2J325DB2是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 945*6075 | mm |
| 典型功率 @6GHz 48V | 325 | W |
| 效率 @6GHz 48V | 61 | % |
| 增益 @6GHz 48V | 17.3 | dB |
| 典型功率 @10GHz 28V | 180 | W |
| 效率 @10GHz 28V | 45 | % |
| 增益 @10GHz 28V | 9.8 | dB |
1、效率、增益标识为对应 48V 6GHz频点，最大效率下的仿真数据；
仿真测试条件：VDD = 48 V, IDQ = 1267 mA, 频率 = 6 GHz
2、效率、增益标识为对应 28V 10GHz频点，最大效率下的仿真数据
仿真测试条件：VDD = 28 V, IDQ = 1267 mA, 频率 = 10 GHz
D2J185DE2是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 920*4250 | mm |
| 典型功率 @6GHz 48V | 185 | W |
| 效率 @6GHz 48V | 67 | % |
| 增益 @6GHz 48V | 18.1 | dB |
| 典型功率 @10GHz 28V | 100 | W |
| 效率 @10GHz 28V | 52 | % |
| 增益 @10GHz 28V | 12.1 | dB |
1、效率、增益标识为对应 48V 6GHz频点，最大效率下的仿真数据；
仿真测试条件：VDD = 48 V, IDQ = 697 mA, 频率 = 6 GHz
2、效率、增益标识为对应 28V 10GHz频点，最大效率下的仿真数据
仿真测试条件：VDD = 28 V, IDQ = 697 mA, 频率 = 10 GHz
D2J0160DH2是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 800*4390 | mm |
| 典型功率 @6GHz 48V | 160 | W |
| 效率 @6GHz 48V | 69 | % |
| 增益 @6GHz 48V | 19.6 | dB |
| 典型功率 @10GHz 28V | 90 | W |
| 效率 @10GHz 28V | 54 | % |
| 增益 @10GHz 28V | 13.8 | dB |
1、效率、增益标识为对应 48V 6GHz频点，最大效率下的仿真数据；
仿真测试条件：VDD = 48 V, IDQ = 308 mA, 频率 = 6 GHz
2、效率、增益标识为对应 28V 10GHz频点，最大效率下的仿真数据
仿真测试条件：VDD = 28 V, IDQ = 308 mA, 频率 = 10 GHz
D2J140DE2是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 850*3770 | mm |
| 典型功率 @6GHz 48V | 140 | W |
| 效率 @6GHz 48V | 70 | % |
| 增益 @6GHz 48V | 18.4 | dB |
| 典型功率 @10GHz 28V | 75 | W |
| 效率 @10GHz 28V | 55 | % |
| 增益 @10GHz 28V | 13.0 | dB |
1、效率、增益标识为对应 48V 6GHz频点，最大效率下的仿真数据；
仿真测试条件：VDD = 48 V, IDQ =497 mA, 频率 = 6 GHz
2、效率、增益标识为对应 28V 10GHz频点，最大效率下的仿真数据
仿真测试条件：VDD = 28 V, IDQ = 497 mA, 频率 = 10 GHz
D2J090DE2是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 790*2835 | mm |
| 典型功率 @6GHz 48V | 90 | W |
| 效率 @6GHz 48V | 73 | % |
| 增益 @6GHz 48V | 18.9 | dB |
| 典型功率 @10GHz 28V | 50 | W |
| 效率 @10GHz 28V | 58 | % |
| 增益 @10GHz 28V | 13.7 | dB |
1、效率、增益标识为对应 48V 6GHz频点，最大效率下的仿真数据；
仿真测试条件：VDD = 48 V, IDQ =308 mA, 频率 = 6 GHz
2、效率、增益标识为对应 28V 10GHz频点，最大效率下的仿真数据
仿真测试条件：VDD = 28 V, IDQ = 308 mA, 频率 = 10 GHz
D2J070DH2是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 655*2725 | mm |
| 典型功率 @6GHz 48V | 70 | W |
| 效率 @6GHz 48V | 73 | % |
| 增益 @6GHz 48V | 20.5 | dB |
| 典型功率 @10GHz 28V | 38 | W |
| 效率 @10GHz 28V | 60 | % |
| 增益 @10GHz 28V | 15.5 | dB |
1、效率、增益标识为对应 48V 6GHz频点，最大效率下的仿真数据；
仿真测试条件：VDD = 48 V, IDQ =227 mA, 频率 = 6 GHz
2、效率、增益标识为对应 28V 10GHz频点，最大效率下的仿真数据
仿真测试条件：VDD = 28 V, IDQ = 227 mA, 频率 = 10 GHz
D2H620DE1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 1445*5870 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 620 | W |
| 效率 | 75 | % |
| 增益 | 18.3 | Db |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 2400 mA, 频率 = 2.6 GHz
DXG1CH08B-240CF is a 240 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 758 MHz to 821 MHz cellular base station applications. It features input matching, wideband and an earless thermally-enhanced package.
Parameter | Value | Unit |
Frequency (Min.) | 758 | MHz |
Frequency (Max.) | 821 | MHz |
Supply Voltage (Typ.) | 48 | MHz |
Psat (Typ.) | 53.8 | V |
Power Gain | / | dBm |
Efficiency | / | dB |
ACPR | / | dBc |
Note: Above Performance is the typical performance in Dynax’s demo with the device soldered to the heatsink, test condition: VDS = 48 V, IDQ = 650 mA, Pout = 47.8 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
D2H500DE1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 1225*5900 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 500 | W |
| 效率 | 72 | % |
| 增益 | 18.4 | Db |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 1872 mA, 频率 = 2.6 GHz
DXG1CH08A-560EF is a 560 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 758 MHz to 821 MHz cellular base station applications. It features input matching, wideband and an earless thermally-enhanced package.
Parameter | Value | Unit |
Frequency (Min.) | 758 | MHz |
Frequency (Max.) | 821 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 57.0 | dBm |
Power Gain @ 780 MHz | 18.0 | dB |
Efficiency @ 780 MHz | 56 | % |
ACPR @ 780 MHz | -28.0 | dBC |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 500 mA, VGSB = - 5.2 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
D2H400DE1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 1065*5900 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 400 | W |
| 效率 | 73 | % |
| 增益 | 19.2 | Db |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 1488 mA, 频率 = 2.6 GHz
DXG1CH08A-540EF is a 540 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 758 MHz to 821 MHz cellular base station applications. It features input matching, wideband and a thermally-enhanced package.
Parameter | Value | Unit |
Frequency (Min.) | 758 | MHz |
Frequency (Max.) | 821 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 57.0 | dBm |
Power Gain @ 780 MHz | 18.0 | dB |
Efficiency @ 780 MHz | 58.0 | % |
ACPR @ 780 MHz | -28.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, Test condition: VDS = 48 V, IDQA = 500 mA, VGSB = - 4.5 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
D2H320DB1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 915*6075 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 320 | W |
| 效率 | 76 | % |
| 增益 | 20.1 | Db |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 1180 mA, 频率 = 2.6 GHz
DXG1CH19A-100EF is a 100 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 1805 MHz to 2170 MHz cellular base station applications. It features input matching, wide instantaneous bandwidth and an earless thermally-enhanced package.
Parameter | Value | Unit |
Frequency (Min.) | 1805 | MHz |
Frequency (Max.) | 2170 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 50.0 | dBm |
Power Gain @ 2140 MHz | 16.8 | dB |
Efficiency @ 2140 MHz | 58.0 | % |
ACPR @ 2140 MHz | -30.0 | dBC |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 80 mA, VGSB = - 5.2 V, Pout = 41.7 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
D2H320DE1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 935*5870 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 320 | W |
| 效率 | 76 | % |
| 增益 | 19.3 | Db |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 1176 mA, 频率 = 2.6 GHz
DXG1CH19A-370EF is a 370 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 1805 MHz to 1880 MHz cellular base station applications. It features input matching, wide instantaneous bandwidth and a thermally-enhanced package.
Parameter | Value | Unit |
Frequency (Min.) | 1805 | MHz |
Frequency (Max.) | 1880 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 55.7 | dBm |
Power Gain @ 1842 MHz | 15.5 | dB |
Efficiency @ 1842 MHz | 56.0 | % |
ACPR @ 1842 MHz | -28.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 400 mA, VGSB = - 5.2 V, Pout = 47.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
D2H290DE1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 955*5795 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 290 | W |
| 效率 | 77 | % |
| 增益 | 20.2 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 1056 mA, 频率 = 2.6 GHz
DXG2CH22A-520EF is a 520 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2110 MHz to 2170 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 2110 | MHz |
Frequency (Max.) | 2170 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 57.1 | dBm |
Power Gain @ 2140 MHz | 14.8 | dB |
Efficiency @ 2140 MHz | 58.2 | % |
ACPR @ 2140 MHz | -34.6 | dBC |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 200 mA, VGSB = - 5.5 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF.ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
D2H235DE1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 835*5440 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 235 | W |
| 效率 | 79 | % |
| 增益 | 20.3 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 842 mA, 频率 = 2.6 GHz
中文版
