中文版 EN
产品

产品

Part Number Package Band(MHz) Ppeak(W) Pout(dBm) Eff@Pout(%) Power Gain(dB) Status Download
DF2G5060-140EF2 780P2 5000~6000 140 50.5 54.2 9.5 Engineering Sample
DF2G4460-50DF2 360F1 4400~6000 50.0 47.7 60.8 8.9 Engineering Sample
DF2G4460-30DF2 360F1 4400~6000 30.0 45.5 58.9 9.2 Engineering Sample
DF2G0007-16N DFN 6mm×5mm 30~700 16.0 40.5 67.0 18.8 Engineering Sample
DF1G0010-16N DFN 6mm×5mm 20~1000 16.0 40.6 55.0 12.6 Engineering Sample
DF2H0014-350EF 780P2 DC~1400 350 55.8 67.0 18.2 Engineering Sample
DF2G1020-120CF 400P1 1000~2000 120 51.0 69.0 19.3 Engineering Sample
DF2G0060-25DF 200F1 DC~6000 25.0 45.7 78.0 12.8 Engineering Sample
DF2G0040-35DF 360F1 DC~4000 35.0 47.2 67.2 14.2 Engineering Sample
DF2G0040-45DF 360F1 DC~4000 45.0 48.2 70.6 12.1 Engineering Sample
DF2G0026-330FF 650F2 DC~2600 330 53.1 74.6 15.1 Engineering Sample
DF2G0030-180FF 650F2 DC~3000 180 51.6 81.0 16.4 Engineering Sample
DF2G0030-120DF 360F1 DC~3000 120 51.0 75.9 13.9 Engineering Sample
DF2G0040-90DF 360F1 DC~4000 90.0 51.0 80.6 14.8 Engineering Sample
DF2G0060-10DF 200F1 DC~6000 10.0 42.1 77.2 17.5 Engineering Sample
DXG1CH59B-30DF 360F1 5000~6000 35.0 55.0 30.0 16.0 Released Product
DF2G0040-45CF 360P1 DC~4000 45.0 48.2 70.6 12.1 Engineering Sample
DF2G0030-120CF 360P1 DC~3000 120 51.0 75.9 13.9 Engineering Sample
DF2H0026-650FF 650F2 DC~2600 650 56.0 62.9 24.5 Engineering Sample
DF2H0014-175DF 400F1 DC~1400 175 52.8 67.0 18.2 Engineering Sample
Test condition: Single-Carrier W-CDMA, IQ magnitude clipping, Input signal PAR = 7.5 dB @ 0.01 % probability on CCDF. ACPR measured in 3.84 MHz channel bandwidth @ ±5 MHz offset.

DF2G5060-140EF2

Brief description for the product

DF2G5060-140EF2

DF2G5060-140EF2 is a 140 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 5000 to 6000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

5000

MHz

Frequency (Max.)

6000

MHz

Supply Voltage (Typ.)

28

V

Psat @ 5000 MHz

50.5

dBm

Power Gain @ 5000 MHz

9.7

dB

Efficiency @ 5000 MHz

63.3

%


Note: Measured in the DF2G5060-140EF2 application circuit, test condition: VDS = 28 V, IDQ = 100 mA.



DF2G4460-50DF2

Brief description for the product

DF2G4460-50DF2

DF2G4460-50DF2 is a 50 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4400 to 6000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

4400

MHz

Frequency (Max.)

6000

MHz

Supply Voltage (Typ.)

28

V

Psat @ 5700 MHz

48.1

dBm

Power Gain @ 5700 MHz

9.4

dB

Efficiency @ 5700 MHz

61.0

%


Note: Measured in the DF2G440-50DF2 application circuit, test condition: VDS = 28 V, IDQ = 400 mA.


DF2G4460-30DF2

Brief description for the product

DF2G4460-30DF2

DF2G4460-30DF2 is a 30 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4400 to 6000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

4400

MHz

Frequency (Max.)

6000

MHz

Supply Voltage (Typ.)

28

V

Psat @ 5500 MHz

46.0

dBm

Power Gain @ 5500 MHz

9.5

dB

Efficiency @ 5500 MHz

66.6

%


Note: Measured in the DF2G440-30DF2 application circuit, test condition: VDS = 28 V, IDQ = 200 mA,



DF2G0007-16N

Brief description for the product

DF2G0007-16N

DF2G0007-16N is a 16 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 30 to 700 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

30

MHz

Frequency (Max.)

700

MHz

Supply Voltage (Typ.)

28

V

Psat @325MHz 

41.1

dBm

Power Gain @ 325 MHz

19.4

dB

Efficiency @ 325 MHz

69.5

%


Note: Measured in the DF2G0007-16N application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Pout=39dBm，Pulse width = 100 μs, Duty cycle = 10 %.


DF1G0010-16N

Brief description for the product

DF1G0010-16N

DF1G0010-16N is a 16 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 20 to 1000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

20

MHz

Frequency (Max.)

1000

MHz

Supply Voltage (Typ.)

28

V

Psat @325MHz (Typ.)

41.2

dBm

Power Gain @ 325 MHz

15

dB

Efficiency @ 325  MHz

72

%


Note: Measured in the DF1G0010-16N application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Input signal is CW

DF2H0014-350EF

Brief description for the product

DF2H0014-350EF

DF2H0014-350EF is a 350 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 1400 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

1400

MHz

Supply Voltage (Typ.)

48

V

Psat1 @ 990 MHz

55.8

dBm

Power Gain2 @ 990 MHz

18.2

dB

Efficiency2@ 990 MHz

67

%


Note: Measured in the DF2H0014-350DF application circuit, test condition: VDS = 48 V, IDQ = 250 mA, Pulse width = 350 μs, Duty cycle = 10 %.

1. The output power is saturated power.

2. Test condition: Based on Pout. = 350 W.


DF2G1020-120CF

Brief description for the product

DF2G1020-120CF

DF2G1020-120CF is a 120 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 1000 to 2000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

6000

MHz

Supply Voltage (Typ.)

28

V

Psat1 @ 1800 MHz

51

dBm

Power Gain2 @ 1800 MHz

19.3

dB

Efficiency2@ 1800 MHz

69

%


Note: Measured in the DF2G1020-120CF application circuit, test condition: VDS = 28 V, IDQ = 450 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. Test condition: Based on Maximum Output Power.

2. Test condition: Based on Maximum Drain Efficiency.


DF2G0060-25DF

Brief description for the product

DF2G0060-25DF

DF2G0060-25DF is a 25 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

6000

MHz

Supply Voltage (Typ.)

28

V

Psat1 @ 2600 MHz

45.7

dBm

Power Gain2 @ 2600 MHz

12.8

dB

Efficiency2@ 2600 MHz

78

%


Note: Measured in the DF2G0060-25DF application circuit, test condition: VDS = 28 V, IDQ = 80 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. Test condition: Based on Maximum Output Power.

2. Test condition: Based on Maximum Drain Efficiency.


DF2G0040-35DF

Brief description for the product

DF2G0040-35DF

DF2G0040-35DF is a 35 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

4000

MHz

Supply Voltage (Typ.)

28

V

Psat1 @ 4000 MHz

47.2

dBm

Power Gain2 @ 4000 MHz

14.2

dB

Efficiency2@ 4000 MHz

67.7

%


Note: Measured in the DF2G0040-35DF application circuit, test condition: VDS = 28 V, IDQ = 200 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. Test condition: Based on Maximum Output Power.

2. Test condition: Based on Maximum Drain Efficiency.


DF2G0040-45DF

Brief description for the product

DF2G0040-45DF

DF2G0040-45DF is a 45 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

4000

MHz

Supply Voltage (Typ.)

28

V

Psat1 @ 4000 MHz

48.2

dBm

Power Gain2 @ 4000 MHz

12.1

dB

Efficiency2@ 4000 MHz

70.6

%


Note: Measured in the DF2G0040-45DF application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. Test condition: Based on Maximum Output Power.

2. Test condition: Based on Maximum Drain Efficiency.


DF2G0026-330FF

Brief description for the product

DF2G0026-330FF

DF2G0026-330FF is a 330 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 2600 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

2600

MHz

Supply Voltage (Typ.)

28

V

Psat1 @ 2500 MHz

53.1

dBm

Power Gain2 @ 2500 MHz

15.1

dB

Efficiency2@ 2500 MHz

74.6

%


Note: Measured in the DF2H0026-650FF application circuit, test condition: VDS = 28 V, IDQ = 300 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. Test condition: Based on one side Maximum Output Power.

2. Test condition: Based on one side Maximum Drain Efficiency.


DF2G0030-180FF

Brief description for the product

DF2G0030-180FF

DF2G0030-180FF is a 180 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 3000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

3000

MHz

Supply Voltage (Typ.)

28

V

Psat1 @ 2500 MHz

51.6

dBm

Power Gain2 @ 2500 MHz

16.4

dB

Efficiency2@ 2500 MHz

81.0

%


Note: Measured in the DF2G0030-180FF application circuit, test condition: VDS = 28 V, IDQ = 200 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. Test condition: Based on Maximum Output Power.

2. Test condition: Based on Maximum Drain Efficiency.


DF2G0030-120DF

Brief description for the product

DF2G0030-120DF

DF2G0030-120DF is a 120 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 3000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

3000

MHz

Supply Voltage (Typ.)

28

V

Psat1 @ 2500 MHz

51.4

dBm

Power Gain2 @ 2500 MHz

15.3

dB

Efficiency2@ 2500 MHz

82.3

%


Note: Measured in the DF2G0030-120DF application circuit, test condition: VDS = 28 V, IDQ = 200 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. Test condition: Based on Maximum Output Power.

2. Test condition: Based on Maximum Drain Efficiency.


DF2G0040-90DF

Brief description for the product

DF2G0040-90DF

DF2G0040-90DF is a 90 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

4000

MHz

Supply Voltage (Typ.)

28

V

Psat1 @ 2500 MHz

51

dBm

Power Gain2 @ 2500 MHz

11.9

dB

Efficiency2@ 2500 MHz

80.6

%


Note: Measured in the DF2G0040-90DF application circuit, test condition: VDS = 28 V, IDQ = 400 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. Test condition: Based on Maximum Output Power.

2. Test condition: Based on Maximum Drain Efficiency.


DF2G0060-10DF

Brief description for the product

DF2G0060-10DF

DF2G0060-10DF is a 10 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

6000

MHz

Supply Voltage (Typ.)

28

V

Psat1 @ 2600 MHz

42.1

dBm

Power Gain2 @ 2600 MHz

17.5

dB

Efficiency2@ 2600 MHz

77.2

%


Note: Measured in the DF2G0060-10DF application circuit, test condition: VDS = 28 V, IDQ = 50 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. Test condition: Based on Maximum Output Power.

2. Test condition: Based on Maximum Drain Efficiency.


DXG1CH59B-30DF

Brief description for the product

DXG1CH59B-30DF

DXG1CH59B-30DF is a 30 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 5000 to 6000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

5000

MHz

Frequency (Max.)

6000

MHz

Supply Voltage (Typ.)

48

V

Psat

55

dBm

Power Gain

16

dB

Efficiency

30

%


Note: Measured in the DXG1CH59B-30DF application circuit, test condition: VDS = 48 V, IDQ = 80 mA, Pavg = 9 W,Pulse width = 100 μs, Duty cycle = 10 %.


DF2G0040-45CF

Brief description for the product

DF2G0040-45CF

DF2G0040-45CF is a 45 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

4000

MHz

Supply Voltage (Typ.)

28

V

Psat1 @ 4000 MHz

48.2

dBm

Power Gain2 @ 4000 MHz

12.1

dB

Efficiency2@ 4000 MHz

70.6

%


Note: Measured in the DF2G0040-45CF application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. Test condition: Based on Maximum Output Power.

2. Test condition: Based on Maximum Drain Efficiency.


DF2G0030-120CF

Brief description for the product

DF2G0030-120CF

DF2G0030-120CF is a 120 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 3000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

3000

MHz

Supply Voltage (Typ.)

48

V

Psat1 @ 2500 MHz

51.4

dBm

Power Gain2 @ 2500 MHz

15.3

dB

Efficiency2@ 2500 MHz

82.3

%


Note: Measured in the DF2G0030-120CF application circuit, test condition: VDS = 28 V, IDQ = 200 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. Test condition: Based on Maximum Output Power.

2. Test condition: Based on Maximum Drain Efficiency.


DF2H0026-650FF

Brief description for the product

DF2H0026-650FF

DF2H0026-650FF is a 650 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 2600 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

2600

MHz

Supply Voltage (Typ.)

48

V

Psat1 @ 678 MHz

56

dBm

Power Gain2 @ 678 MHz

24.5

dB

Efficiency1@ 678 MHz

62.9

%


Note: Measured in the DF2H0026-650FF application circuit, test condition: VDS = 48 V, IDQ = 300 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. The output power is saturated power.

2. Test condition: Based on rollback gain @ 50 dbm.


DF2H0014-175DF

Brief description for the product

DF2H0014-175DF

DF2H0014-175DF is a 175 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 1400 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

1400

MHz

Supply Voltage (Typ.)

48

V

Psat1 @ 990 MHz

52.8

dBm

Power Gain2 @ 990 MHz

18.2

dB

Efficiency2@ 910 MHz

67.0

%


Note: Measured in the DF2H0014-175DF application circuit, test condition: VDS = 48 V, IDQ = 250 mA, Pulse width = 350 μs, Duty cycle = 10 %.

1. The output power is saturated power.

2. Test condition: Based on Pout. = 175W.


产品|应用 客户支持 加入我们 关于能讯
© 2020 苏州能讯高能半导体有限公司 版权所有. All Rights Reserved. 苏ICP备13024362号-1