| Part Number | Package | Band(MHz) | Application | Ppeak(dBm) | Pavg(dBm) | Eff@Pavg(%) | Linear Gain(dB) | Status | Download |
|---|---|---|---|---|---|---|---|---|---|
| DXG1CH60B-45CF/DF | Ceramic 200-2 | DC~6000 | Multi-Market | 46.5 | - | - | - | Released Product |
DXG1CH60B-45CF/DF is a 45 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for DC to 6 GHz general purpose applications. It features wide bandwidth, high gain and an earless thermally-enhanced package.
Parameter | Value | Unit |
Frequency (Min.) | DC | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 46.5 | dBm |
Small Signal Gain2 | 17.0 | dB |
Peak Efficiency @ 2600 MHz | 65.0 | % |
Note:
1 Typical Performance in Dynax Wideband Class AB Demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQ = 80 mA, Input signal Pulsed CW, Pulse Width = 100 μs, Duty Cycle = 10 %.
2 Measured at Pout = Psat – 6 dB.
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